Plasma MBE growth conditions of AlGaN/GaN high-electron-mobility transistors on silicon and their device characteristics with epitaxially regrown ohmic contacts
نویسندگان
چکیده
Silicon substrates offer an attractive substrate platform for GaN RF and power electronics. In this work, we address the key challenges and provide solutions for the RF-MBE growth of GaN high-electron-mobility transistors (HEMTs) on Si(111). Moreover, by developing low-leakage buffer layers and employing raised source/drain regrown ohmic contacts, high-performance HEMTs are realized at a significantly lower process temperature by plasma MBE than by MOCVD. This is expected to motivate further ideas for the integration of GaN with silicon that go beyond RF and power electronics into the regime of low-power digital logic by exploiting the unique polarization properties of GaN. © 2014 The Japan Society of Applied Physics
منابع مشابه
AlGaN/GaN HEMTs on Si by MBE with regrown contacts and fT = 153 GHz
AlGaN/GaN high-electron-mobility transistors (HEMT) have been grown by radio frequency molecular beam epitaxy (RF-MBE) on 3” Si substrates. A record low contact resistance Rc ~ 0.11 .mm has been achieved for GaN HEMTs on Si by using non alloyed ohmic contacts regrown by MBE. Owing to the low contact resistance a 75-nm gate length unpassivated HEMT shows intrinsic current gain cut-off frequency ...
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